Fujitsu Parallel FeRAM Memory MB85R4M2T with 4M Bit Density
The MB85R4M2T is a FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words× 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
Description
1. MB85R4M2T DESCRIPTIONS
The MB85R4M2T is a FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words× 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
This FeRAM is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in this memory can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. It uses a pseudo-SRAM interface.
2. MB85R4M2T FEATURES
- Bit configuration: 262,144 words × 16 bits
- LB and UB data byte control: Available Configuration of 524,288 words × 8 bits
- Read/write endurance: 1013 times / 16 bits
- Data retention: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
- Operating power supply voltage: 1.8 V to 3.6 V
- Low power operation: Operating power supply current 20 mA (Max)
Standby current 150 μA (Max)
Sleep current 20 μA (Max)
- Operation ambient temperature range : − 40 °C to + 85 °C
- Package: 44-pin plastic TSOP
3. MB85R4M2T Application
This non-volatile Memory IC, Ideal for Industrial Machines, Industrial Robots, Industrial Controllers, etc, Achieving Both High-speed Operation and Low Power Consumption
4. Ordering model No.
The ordering P/N of this FeRAM includes, MB85R4M2TFN-G-JAE2
As Fujitsu first grade distributor, Kingdom-tech will provide the original FeRAMs and excellent service. Please feel free to contact on line or send emails, [email protected].
Related product: MB85R8M2TA
