MB85R4M2TFN-G-JAE2 Parallel FeRAM 4M Bit Density

Description

DESCRIPTIONS

The MB85R4M2TFN-G-JAE2 is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words

× 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process

technologies.

The MB85R4M2TFN-G-JAE2 is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R4M2T can be used for 1013 read/write operations, which is a

significant improvement over the number of read and write operations supported by Flash memory and

E2PROM. The MB85R4M2T uses a pseudo-SRAM interface.

FEATURES

• Bit configuration: 262,144 words × 16 bits

• LB and UB data byte control: Available Configuration of 524,288 words × 8 bits

• Read/write endurance: 1013 times / 16 bits

• Data retention: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)

• Operating power supply voltage: 1.8 V to 3.6 V

• Low power operation: Operating power supply current 20 mA (Max)

Standby current 150 μA (Max)

Sleep current 20 μA (Max)

• Operation ambient temperature range : − 40 °C to + 85 °C
• Package: 44-pin plastic TSOP (FPT-44P-M35)

RoHS compliant