The MB85R8M1TABGL-G-JAE1 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 1,048,576 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
Description
1.DESCRIPTIONS
The MB85R8M1TABGL-G-JAE1 is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 1,048,576 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
The MB85R8M1TABGL-G-JAE1 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R8M1TABGL-G-JAE1 can be used for 10read/write operations for 64bits, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R8M1TA uses a pseudo-SRAM interface.
2.FEATURES
- Bit configuration: 1,048,576 words × 8 bits
- Read/write endurance: 1014 times / 64 bits
- Data retention: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
- Operating power supply voltage: 1.8 V to 3.6 V
- Low power operation: Operating power supply current 18 mA (Max)
Standby current 150 μA (Max)
Sleep current 10 μA (Max)
- Operation ambient temperature range : − 40 °C to + 85 °C
- Package: 48-pin plastic FBGA
44-pin plastic TSOP
RoHS compliant
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