Parallel FeRAM Memory MB85R8M2TA with 8M Bit Density from Fujitsu
The MB85R8M2TA is a FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
Description
1. MB85R8M2TA DESCRIPTIONS
The MB85R8M2TA is a FeRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
It is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in this FeRAM can be used for 1014(100 trillion times) read/write operations for 64bits, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R8M2TA uses a pseudo-SRAM interface.
The new product achieves both high-speed operations, approximately 30% faster access speed, and low power consumption, 10% less operating current, compared to Fujitsu’s conventional products. This memory IC is an ideal replacement of SRAM in the industrial machines that require high-speed operation.
Being capable of operating up to 25ns in fast page mode, the new FeRAM’s access speed is as high as SRAM at continuous data transfer. It achieves not only higher-speed operation but lower power consumption than Fujitsu’s conventional FeRAM product.
This FeRAM has the maximum write current of 18mA, 10% less than the current product, and the maximum standby current of 150µA, 50% less. It is housed in a 44-pin TSOP package which is the same package as Fujitsu’s 4Mbit FeRAM in addition to a 48-pin FBGA package.
The new 8Mbit FeRAM brings customers the benefit of eliminating a data-backup battery necessary for SRAM in some cases. Fujitsu’s FeRAM product can solve the following issues arising from replacing SRAM with non-volatile memory.
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Issue: Additional work to change interface design and PCB design
Solution: Use of FeRAM compatible with SRAM interface and SRAM package -
Issue: Difficult to replace with non-volatile memory of very slow writing speed
Solution: Use of FeRAM featuring fast writing operation as a maximum 25ns in page mode -
Issue: Design restriction due to writing endurance up to 10 trillion times
Solution: Use of FeRAM with writing endurance up to 100 trillion times
2. MB85R8M2TA FEATURES
- Bit configuration: 524,288 words × 16 bits
- Read/write endurance: 1014 times / 64 bits
- Data retention: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
- Operating power supply voltage: 1.8 V to 3.6 V
- Low power operation: Operating power supply current 18 mA (Max)
Standby current 150 μA (Max)
Sleep current 10 μA (Max)
- Operation ambient temperature range : − 40 °C to + 85 °C
- Package: 48-pin plastic FBGA
44-pin plastic TSOP
RoHS compliant
3. MB85R8M2TA Application
This non-volatile Memory IC, Ideal for Industrial Machines, Industrial Robots, Industrial Controllers, etc, Achieving Both High-speed Operation and Low Power Consumption
4. ordering model No.
The ordering P/N of this FeRAM includes, MB85R8M2TABGL-G-JAE1 and MB85R8M2TAFN-G-JAE2.
As Fujitsu first grade distributor, Kingdom-tech will provide the original FeRAMs and excellent service. Please feel free to contact on line or send emails, [email protected].
