FeRAM Memory Chips MB85RC16PNF-G-JNERE1 16K Bit I2C from Fujitsu

The MB85RC16PNF-G-JNERE1 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words ×8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Description

■ DESCRIPTION

The MB85RC16PNF-G-JNERE1 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words ×8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery.

The memory cells used in the MB85RC16 have at least 1012 Read/Write operation endurance per byte, which is a significant improvement over the number of read/write operations than by other nonvolatile memory products.

The MB85RC16PNF-G-JNERE1 can provide writing in one byte units because the long writing time is not required unlike Flash memory and E2PROM. Therefore, the writing completion waiting sequence like a write busy state is not required.

■ FEATURES

  • Bit configuration: 2,048 words × 8 bits
  • Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
  • Operating frequency: 1 MHz (Max)
  • Read/Write endurance : 1012 times/byte
  • Data retention: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
  • Operating power supply voltage : 2.7 V to 3.6 V
  • Low power consumption : Operating power supply current 70 μA (Typ @1 MHz)

Standby current 0.1 μA (Typ)

  • Operation ambient temperature range : − 40 °C to + 85 °C
  • Package: 8-pin plastic SOP (FPT-8P-M02)  8-pin plastic SON (LCC-8P-M04)

RoHS compliant

Related Product:MB85RC16V ; MB85RS64TPNF-G-JNERE2