The MB85RC64TAPNF-G-BDERE1 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Description
■ DESCRIPTION
The MB85RC64TAPNF-G-BDERE1 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
■ FEATURES
- Bit configuration : 8,192 words x 8 bits
- Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
- Operating frequency : 3.4 MHz (Max @HIGH SPEED MODE)
1 MHz (Max @FAST MODE PLUS)
- Read/write endurance : 1013 times / byte
- Data retention : 19.1 years ( + 105 ℃), 70.4 years ( + 85 ℃)
- Operating power supply voltage : 1.8 V to 3.6 V
- Low power consumption : Operating power supply current 170 uA (Typ @3.4 MHz)
Standby current 8 uA (Typ)
Sleep current 4 uA (Typ)
- Operation ambient temperature range : -40 ℃ to + 105 ℃
- Package : 8-pin plastic SOP
8-pin plastic SON
RoHS compliant
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