64KB IC FeRAM MB85RC64VPNF-G-JNERE1

Description

■ DESCRIPTION

The MB85RC64VPNF-G-JNERE1 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM, the MB85RC64V is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC64V has improved to be at least 1012 cycles, significantly outperforming other nonvolatile memory products in the number.

The MB85RC64VPNF-G-JNERE1 does not need a polling sequence after writing to the memory such as the case of Flash

memory or E2PROM.

■ FEATURES

• Bit configuration: 8,192 words x 8 bits

• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating frequency: 1 MHz (Max)

• Read/write endurance : 1012 times / byte
• Data retention: 10 years ( + 85 ℃), 95 years ( + 55 ℃), over 200 years ( + 35 ℃)

• Operating power supply voltage: 3.0 V to 5.5 V
• Low-power consumption : Operating power supply current 90 uA (Typ @1 MHz)

Standby current 5 uA (Typ)

• Operation ambient temperature range: – 40 ℃ to + 85 ℃

• Package: 8-pin plastic SOP (FPT-8P-M02)

RoHS compliant