MB85RS16PNF-G-JNERE1 16K SPI FeRAM

Description

■ DESCRIPTION

MB85RS16PNF-G-JNERE1 is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

MB85RS16PNF-G-JNERE1 adopts the Serial Peripheral Interface (SPI).

The MB85RS16 is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS16 can be used for 1012 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

MB85RS16PNF-G-JNERE1 does not take long time to write data like Flash memories or E2PROM, and MB85RS16 takes

no wait time.

■ FEATURES

• Bit configuration : 2,048 words × 8 bits
• Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : 20 MHz (Max)
• High endurance : 1 trillion Read/Writes per byte
• Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
• Operating power supply voltage : 2.7 V to 3.6 V
• Low power consumption : Operating power supply current 1.5 mA ([email protected] MHz)

Standby current 5 μA (Typ)

• Operation ambient temperature range : − 40 °C to +85 °C
• Package : 8-pin plastic SOP (FPT-8P-M02)

RoHS compliant