The MB85RS1MTPNF-G-JNERE1, MB85RC1MT is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
The MB85RS1MTPNF-G-JNERE1, MB85RC1MT is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, the MB85RS1MTPNF-G-JNERE1 is to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC1MT has improved to be at least 1013 cycles, significantly outperforming other nonvolatile memory products in the number.
The MB85RC1MT does not need a polling sequence after writing to the memory such as the case of Flash
memory or E2PROM.
- Bit configuration: 131,072 words × 8 bits
- Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
- Operating frequency: 3.4 MHz (Max @HIGH SPEED MODE)
1 MHz (Max @FAST MODE PLUS)
- Read/write endurance : 1013 times / byte
- Data retention: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
- Operating power supply voltage: 1.8 V to 3.6 V
- Low-power consumption : Operating power supply current 0.71 mA (Typ @3.4 MHz)
1.2 mA (Max @3.4 MHz)
Standby current 15 μA (Typ)
Sleep current 4 μA (Typ)
- Operation ambient temperature range: − 40 °C to + 85 °C
- Package: 8-pin plastic SOP (FPT-8P-M02)
Why FeRAM is more superior to more memories? Please check the video.
1. Non-volatile, no need battery
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