Fujitsu FeRAM Memory Chips MB85RS2MTAPNF-G-BDERE1 2M Bit SPI
MB85RS2MTAPNF-G-BDERE1 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Description
DESCRIPTION
MB85RS2MTAPNF-G-BDERE1 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RS2MTAPNF-G-BDERE1 adopts the Serial Peripheral Interface (SPI).
The MB85RS2MTA is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS2MTA can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
MB85RS2MTA does not take long time to write data like Flash memories or E2PROM, and MB85RS2MTA takes no wait time.
FEATURES
- Bit configuration : 262,144 words x 8 bits
- Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
- Operating frequency : 40MHz (Max)
- High endurance : 1013 times / byte
- Data retention : 10 years (+85 ℃), 95 years(+55 ℃)
- Operating power supply voltage : 1.7 V to 3.6 V
- Low power consumption : Operating power supply current 2.3mA (Max@40 MHz)
Standby current 50 uA (Max)
Sleep current 10 uA (Max)
- Operation ambient temperature range : -40 ℃ to +85 ℃
- Package : 8-pin plastic SOP
RoHS compliant
Related Product: MB85RS1MT
