MB85RS4MTYPF-G-BCE1 FeRAM 4M Bit Density

Description

 DESCRIPTION

MB85RS4MTYPF-G-BCE1 is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications.

MB85RS4MTYPF-G-BCE1 adopts the Serial Peripheral Interface (SPI).

MB85RS4MTYPF-G-BCE1 is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS4MTY can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

As MB85RS4MTY does not need any waiting time in writing process, the write cycle time of MB85RS4MTY is much shorter than that of Flash memories or E2PROM.

 FEATURES

• Bit configuration: 524,288 words x 8 bits

• Special Sector Region: 256 words x 8 bits

In this region, data storage after (by) three times reflow based on JEDEC MSL-3 standard condition is guaranteed.

• Unique ID
• Serial Number: 64 bits

In this region, data storage after (by) three times reflow based on

JEDEC MSL-3 standard condition is guaranteed.

• Serial Peripheral Interface : SPI (Serial Peripheral Interfaces)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency: 50 MHz (Max)

• High endurance: 1013 times / byte

• Data retention: 50.4 years (+85 ℃), 13.7 years (+105 ℃), 4.2 years (+125 ℃) or more

Under evaluation for more than 4.2 years(+125 ℃)

• Operating power supply voltage : 1.8 V to 3.6 V
• Low power consumption : Operating power supply current 4 mA ([email protected] MHz)

Standby current 350 uA (Max)

Deep Power Down current 30 uA (Max)

Hibernate current 14 uA (Max)

• Operation ambient temperature range : – 40 ℃ to +125 ℃
• Package: 8-pin plastic DFN 5mm x 6mm

RoHS compliant