MB85RC04VPNF-G-JNERE1 4KB I2C HV FeRAM IC

Description

■ MB85RC04VPNF-G-JNERE1 DESCRIPTION

Fujitsu FeRAM MB85RC04VPNF-G-JNERE1 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC04V has improved to be at least 1012 cycles, significantly outperforming other nonvolatile memory products in the number. The MB85RC04VPNF-G-JNERE1 does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.

■ MB85RC04VPNF-G-JNERE1 FEATURES

• Bit configuration : 512 words x 8 bits
• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating frequency : 1 MHz (Max)
• Read/write endurance : 1012 times / byte
• Data retention : 10 years ( + 85 ℃), 95 years ( + 55 ℃), over 200 years ( + 35 ℃)
• Operating power supply voltage: 3.0 V to 5.5 V
• Low-power consumption : Operating power supply current 90 uA (Typ @1 MHz)
Standby current 5 uA (Typ)
• Operation ambient temperature range
: – 40 ℃ to + 85 ℃
• Package : 8-pin plastic SOP (FPT-8P-M02)
RoHS compliant