MB85RC16VPNF-G-JNN1ERE1 16KB I2C HV FeRAM

Description

■ MB85RC16VPNF-G-JNN1ERE1 DESCRIPTION

The MB85RC16VPNF-G-JNN1ERE1 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming thenonvolatile memory cells.

Unlike SRAM, the MB85RC16VPNF-G-JNN1ERE1 is able to retain data without using a data backup battery.

The memory cells used in the MB85RC16V have at least 1012 Read/Write operation endurance per byte,

which is a significant improvement over the number of read/write operations than by other nonvolatile memory products.

The MB85RC16VPNF-G-JNN1ERE1 can provide writing in one byte units because the long writing time is not required unlike Flash memory and E2PROM. Therefore, the writing completion waiting sequence like a write busy state is not required.

■ MB85RC16VPNF-G-JNN1ERE1  FEATURES

• Bit configuration : 2,048 words x 8 bits
• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating frequency : 1 MHz (Max)
• Read/Write endurance : 1012 times / byte
• Data retention : 10 years ( + 85 ℃), 95 years ( + 55 ℃), over 200 years ( + 35 ℃)
• Operating power supply voltage : 3.0 V to 5.5 V
• Low power consumption : Operating power supply current 90 uA (Typ @1 MHz)
Standby current 5 uA (Typ)
• Operation ambient temperature range: – 40 ℃ to + 85 ℃
• Package : 8-pin plastic SOP
RoHS compliant