MB85AS12MTPW-GAERE1 Fujitsu ReRAM 12M

Description

1. DESCRIPTION

MB85AS12MTPW-GAERE1, MB85AS12MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,572,864 words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

MB85AS12MTPW-GAERE1 is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,572,864 words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

MB85AS12MT adopts the Serial Peripheral Interface (SPI).

MB85AS12MT is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85AS12MT can be used for 5 x 105 rewrite operations.

2. FEATURES

• Bit configuration: 12 Mbits (1,572,864 words x 8 bits)

• Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Write buffer size: 256 bytes

• Operating frequency: 10 MHz (Max)

• Data endurance: 5 x 105 times / 4bytes*

*4 bytes are selected by A1 to A0.

• Data retention: 10 years (+85 ℃)

• Operating power supply voltage : 1.6 V to 3.6 V
• Operating power supply current : Write current 1.5 mA (Typ)

Read current 0.15 mA ([email protected] MHz)

Standby current 65 uA (Typ)

Sleep current 6 uA (Typ)

• Operation ambient temperature range : -40 ℃ to +85 ℃
• Package: 11-pin WLP

RoHS compliant