Fujitsu ReRAM Memory Chips MB85AS8MTPW-G-KBAERE1
MB85RS128B is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Description
■ DESCRIPTION
MB85AS8MTPW-G-KBAERE1 is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576 words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85AS8MT adopts the Serial Peripheral Interface (SPI).
MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85AS8MT can be used for 1 106 rewrite operations.
■ FEATURES
Bit configuration: 8 Mbits (1,048,576 words x 8 bits)
READ command 25 MHz (Max)
- High endurance: 1012 times / byte
- Data retention: 10 years ( + 85 ℃), 95 years ( + 55 ℃), over 200 years ( + 35 ℃)
- Operating power supply voltage : 2.7 V to 3.6 V
- Low power consumption : Operating power supply current 6 mA (Typ @33 MHz)
Standby current 9 uA (Typ)
- Operation ambient temperature range : – 40 ℃ to + 85 ℃
- Package: 8-pin plastic SOP (FPT-8P-M02)
RoHS compliant
If you need 64KB high voltage FRAM, MB85RS128B, please turn to the related page for review.
